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s mhop microelectronics c orp. a sdu/d02n60 product summary v dss i d r ds(on) ( ) max 600v 2a 4.7 @ vgs=10v www.samhop.com.tw dec,24,2013 1 details are subject to change without notice. symbol v ds v gs i dm w a p d c -55 to 150 i d units parameter 600 2 5.8 v v 30 t c =25 c gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation operating junction and storage temperature range t j , t stg t c =25 c a t c =100 c a 1.3 t c =100 c w green product n-channel logic level enhancement mode field effect transistor features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. 42 17 thermal characteristics 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc d ver 2.2 g s sdd series to-251s(i-pa) g s d g s d sdd series to-251l(i-pa) sdu series to-252(d-pa) d ordering information ordering code package marking code delivery mode rohs status sdd02n60hs to-251s to-251l sdd02n60 sdd02n60 tube tube halogen free sdu02n60hz to-252 sdu02n60 reel halogen free sdd02n60hl halogen free
4 symbol min typ max units bv dss 600 v 1 i gss 100 na v gs(th) 2 v g fs 1.6 s v sd c iss 300 pf c oss 37 pf c rss 9pf q g 17.5 nc 17 nc q gs 21 nc q gd 8 t d(on) ns t r 1.5 ns t d(off) 2.9 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =300v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =300v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =1a v ds =20v , i d =1a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =480v , v gs =0v v gs = 30v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 4.7 c f=1.0mhz c v ds =300v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.79 v notes www.samhop.com.tw dec,24,2013 2 7 _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.drain current limited by maximum junction temperature. 3.6 1.4 ver 2.2 3 _ sdu/d02n60
www.samhop.com.tw dec,24,2013 3 figure 1. output characteristics v ds , drain-to-source voltage (v) 4 3 2 1 0 0 5 10 15 20 25 30 i d , drain current(a) figure 2. transfer characteristics v gs , gate-to-source voltage (v) i d , drain current(a) i d , drain current (a) tj( c) tj, junction temperature ( c) vth, normalized gate-source threshold voltage tj, junction temperature ( c) figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) r ds(on) , on-resistance normalized drain current and temperature figure 4. on-resistance variation with and gate voltage figure 3. on-resistance vs. drain current 5 v gs = 10v 0.72 0.36 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 0 0.1 v gs =10v r ds(on) ( ) 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =1 a 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua ver 2.2 0.7 0.4 v gs = 5v 1.4 2.1 2.8 3.5 1.5 7.5 6.0 4.5 3.0 9.0 sdu/d02n60 v gs = 6v 1.08 1.44 1.80
www.samhop.com.tw dec,24,2013 4 gate-source voltage figure 7. on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to source voltage(v) v gs , gate to source voltage (v) figure 10. gate charge qg, total gate charge(nc) ver 2.2 r ds(on) ( ) figure 12. maximum safe i d , drain current (a) v ds , drain-source voltage (v) operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 9.0 7.5 6.0 4.5 3.0 1.5 0 24 68 10 0 i d =1a 125 c 75 c 25 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 600 500 400 300 200 100 0 010 20 30 40 50 ciss coss crss 10 8 6 4 2 0 v ds = 300v i d =1a 110 100 1 10 100 300 vds=300v,id=1a vgs=10v tf td(on) 0.1 1 10 100 1000 10 1 0.1 0.01 r d s (on ) limit sdu/d02n60 v gs =10v single pulse t c =25 c dc 10ms 1m s 100us 75 c 25 c 125 c 0 12 3 4 56 78 tr td(off )
t p v (br )dss i as f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p e d in d u ct i ve ver 2.2 www.samhop.com.tw dec,24,2013 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse r g i as 0.01 t p d.u.t l v ds + - dd 20v v sdu/d02n60
sdu/d02n60 ver 2.2 www.samhop.com.tw dec,24,2013 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
www.samhop.com.tw 7 package outline dimensions to-251s b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 2.2 dec,24,2013 sdu/d02n60
ver 2.2 www.samhop.com.tw dec,24,2013 8 package outline dimensions sdu/d02n60 to-251l a1 d a e l1 b1 b2 e c e1 c1 symbol millimeters min nom a 6.40 6.50 a1 5.30 5.40 a2 4.30 b 1.35 1.50 l1 l d 5.40 5.55 c0.55 0.60 c1 e1 1.72 e 2.20 2.30 0.60 0.75 b1 b 4.40 1.77 l b2 1.55 ref 7.40 7.70 0.70 0.85 a2 b4 b3 b3 b4 e max 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.49 0.54 0.59 1.82 2.40 0.80 0.90 2.30
ver 2.2 www.samhop.com.tw dec,24,2013 9 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @* a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h sdu/d02n60
www.samhop.com.tw 10 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) sdu02n60 smc internal code no. (a,b,c...z) ver 2.2 sdu/d02n60 dec,24,2013
www.samhop.com.tw 11 top marking definition to-251s ver 2.2 sdu/d02n60 dec,24,2013 to-251l xxxxxx product no. samhop logo sdd02n60 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. (a,b,c...z) xxxxxx sdd02n60 production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b.....) wafer lot no. smc internal code no. (a,b,c...z)

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